features metal sillicon junction majority carrier conduction h i gh c u rr ent c apa bil i t y , l ow f o r w a r d v o l t age d r op extremely low reverse current i r ultra speed switching characteristics mechanical data case:jedec do--35,glass case weight: approx. 0.13 gram v rrm v f o r w a r d c o nt i n u o us c u rr e nt i f ma i f s m ma t stg /t j t l min. typ. max. 1N60P small temperature coefficient of forward ffffff characteristics s m all s i g n al s c h o ttky d i o de v o l t a g e r a n g e : 4 5 v current: 0.1 a d o - 35 ( g l a ss ) pf % ns /w 60.0 r ja r e v e r s e r e c o v e r y t i m e t h e r m al r e s i s tan c e j u n c t i on to a m b i e n t electrical characteristics parameters units a 0.5 1.0 1.0 v r = 15v detection efficiency (see fig. 4) t rr reverse current junction capacitance i r c j for use in recorder. tv. radio. telephone s a t i s f act o r y w a v e d e t e c t i on e f f i c i en c y s m all current rectifier symbols parameters absolute ratings(limiting values) units value polarity: color band denotes cathode end as detectors,super high speed switching circuits, v f o r w a r d v o l t a g e i f = 1 m a v f 0 . 2 4 45 test conditions value r ep e t i t i v e pe a k r e v e r s e v o l t a ge p e ak f o r w a r d s u r g e c u r r ent ( t = 1 s ) t a =25 storage and junction temperature range i f = i r = 1 m a i rr = 1 m a r c = 100 i f = 20 0 m a 1 n 6 0 p 5 00 xx - 55 ---- + 125 230 maximum lead temperature for soldering during 10s at 4mm from case symbols 50 0.65 0 . 5 v r = 1 0 v f = 1 m h z v l =3v f=30mhz c l =10pf r l =3.8k 1.0 6.0 400 dimensions in millimeters diode semiconductor korea www.diode.kr
www.diode.kr diode semiconductor korea
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